Job Description
- Epitaxial development of novel processes and structures for GaN material system in MOCVD (Metal-organic Chemical Vapor Deposition) processes
- Planning and evaluation of experiments and measurements
- In-depth analysis of processes for crucial parameters on material components and properties
- Sustainable and systematic development in improving efficiency , stability and electrical characteristics of epitaxial wafers
Requirements
- University degree in chemistry, physics, materials science or a comparable natural science degree
- Several years of experience in research and development of novel structures and new process regimes of III-V semiconductors, preferably doctorate in the field of epitaxy and deep understanding of MOCVD processes
- Theoretical knowledge of optoelectronic semiconductor
- Analytical strengths & ability to solve technical problems and issues
- Extraordinary ability for innovation of semiconductor device
